{"entities":{"Q2864895":{"pageid":2875615,"ns":120,"title":"Item:Q2864895","lastrevid":79492178,"modified":"2026-05-06T14:02:11Z","type":"item","id":"Q2864895","labels":{"en":{"language":"en","value":"Numerical solution of drift diffusion equations using 2D finite difference method: application to a strained MOSFET device"}},"descriptions":{"en":{"language":"en","value":"scientific article; zbMATH DE number 6233531"}},"aliases":{},"claims":{"P31":[{"mainsnak":{"snaktype":"value","property":"P31","hash":"fd5912e4dab4b881a8eb0eb27e7893fef55176ad","datavalue":{"value":{"entity-type":"item","numeric-id":56887,"id":"Q56887"},"type":"wikibase-entityid"},"datatype":"wikibase-item"},"type":"statement","id":"Q2864895$2B7394F9-365C-4E21-BC90-8229003CA5DF","rank":"normal"}],"P225":[{"mainsnak":{"snaktype":"value","property":"P225","hash":"3b1319d3de2dd79db6d9a9edcfa4ea0d9cc73c63","datavalue":{"value":"1285.82050","type":"string"},"datatype":"external-id"},"type":"statement","id":"Q2864895$CBC23EA5-FD85-443E-86E0-A6C9BC27012C","rank":"normal"}],"P16":[{"mainsnak":{"snaktype":"value","property":"P16","hash":"feb7849b754ed1f42ae991cce87fbcec27aee5df","datavalue":{"value":{"entity-type":"item","numeric-id":2864894,"id":"Q2864894"},"type":"wikibase-entityid"},"datatype":"wikibase-item"},"type":"statement","id":"Q2864895$DE52C082-53A7-4D34-AE87-A34BC5B39AD0","rank":"normal"},{"mainsnak":{"snaktype":"value","property":"P16","hash":"d943c17694011ba01f9fb2abe8355a8a0fff88a4","datavalue":{"value":{"entity-type":"item","numeric-id":2349689,"id":"Q2349689"},"type":"wikibase-entityid"},"datatype":"wikibase-item"},"type":"statement","id":"Q2864895$AD760261-F6AC-4470-8A21-85C5FB4AAE84","rank":"normal"}],"P28":[{"mainsnak":{"snaktype":"value","property":"P28","hash":"88928c17fadcfc4c4e165345ca8ccf5e078f7614","datavalue":{"value":{"time":"+2013-11-26T00:00:00Z","timezone":0,"before":0,"after":0,"precision":11,"calendarmodel":"http://www.wikidata.org/entity/Q1985727"},"type":"time"},"datatype":"time"},"type":"statement","id":"Q2864895$1C0C684C-CE17-4869-8439-C21129A990F7","rank":"normal"}],"P205":[{"mainsnak":{"snaktype":"value","property":"P205","hash":"efef1017dc1a01515448e41f0665c44595ea846c","datavalue":{"value":"http://www.pphmj.com/abstract/7652.htm","type":"string"},"datatype":"url"},"type":"statement","id":"Q2864895$C83A114B-23D6-4A54-AE61-C097E40A1353","rank":"normal"}],"P226":[{"mainsnak":{"snaktype":"value","property":"P226","hash":"38fe756dae2734d4d99b9df90895c041763ada4a","datavalue":{"value":"82D37","type":"string"},"datatype":"external-id"},"type":"statement","id":"Q2864895$2D4FB9BA-E090-4427-B4D9-B10649E7E480","rank":"normal"},{"mainsnak":{"snaktype":"value","property":"P226","hash":"9576e9eaadbccdac369c84369dc63c194fd49cf2","datavalue":{"value":"82-08","type":"string"},"datatype":"external-id"},"type":"statement","id":"Q2864895$57BC1FCB-6930-4FBD-9E2C-50984C29EC01","rank":"normal"},{"mainsnak":{"snaktype":"value","property":"P226","hash":"b3b15e6d94c737325f7f45da231b80cdfb80c973","datavalue":{"value":"65N06","type":"string"},"datatype":"external-id"},"type":"statement","id":"Q2864895$0AFDC542-894D-4A8A-A5F4-05A9F9FA6040","rank":"normal"},{"mainsnak":{"snaktype":"value","property":"P226","hash":"9e4257514d9fd4eac10996fc6305328b84fd9c9b","datavalue":{"value":"65F10","type":"string"},"datatype":"external-id"},"type":"statement","id":"Q2864895$CF7029D9-7F56-4F99-8CD9-5927D5487AE6","rank":"normal"}],"P1451":[{"mainsnak":{"snaktype":"value","property":"P1451","hash":"014d59d4e39f0126181127a2f13fbb77ae8e2b76","datavalue":{"value":"6233531","type":"string"},"datatype":"external-id"},"type":"statement","id":"Q2864895$FADFD03A-D446-4985-883A-9267F8BF1A14","rank":"normal"}],"P1450":[{"mainsnak":{"snaktype":"value","property":"P1450","hash":"0ea02092af553f4b627117cd82b13c7bf2ac49d6","datavalue":{"value":"sige \\(n\\)MOSFET","type":"string"},"datatype":"string"},"type":"statement","id":"Q2864895$9A3C0749-100F-474E-91A2-D661926CF17B","rank":"normal"},{"mainsnak":{"snaktype":"value","property":"P1450","hash":"37162be8bb58240590c73add02c58cb600100720","datavalue":{"value":"finite difference mesh","type":"string"},"datatype":"string"},"type":"statement","id":"Q2864895$22633190-2472-4C19-8782-F43D0BBD93F6","rank":"normal"},{"mainsnak":{"snaktype":"value","property":"P1450","hash":"9a43c0f18d9ebbb20ec0ccfa222c900594549592","datavalue":{"value":"drift diffusion model (DDM)","type":"string"},"datatype":"string"},"type":"statement","id":"Q2864895$357BBDC1-0183-41E7-AD47-90C0BDBE733D","rank":"normal"},{"mainsnak":{"snaktype":"value","property":"P1450","hash":"de3edea017122f3a545b41585d1a8e00658376ac","datavalue":{"value":"2D simulation","type":"string"},"datatype":"string"},"type":"statement","id":"Q2864895$3C915BE5-26EC-47AA-BFFF-ADD3416301B9","rank":"normal"}],"P1460":[{"mainsnak":{"snaktype":"value","property":"P1460","hash":"57f7fea50d2ce1b39b695c4a1313582eed405e38","datavalue":{"value":{"entity-type":"item","numeric-id":5976449,"id":"Q5976449"},"type":"wikibase-entityid"},"datatype":"wikibase-item"},"type":"statement","id":"Q2864895$44B27296-6E84-46C9-8FA8-99088B0D6481","rank":"normal"}],"P159":[{"mainsnak":{"snaktype":"value","property":"P159","hash":"8ed66af98c29ffd6c7307bc95e52f7c944168799","datavalue":{"value":{"text":"Numerical solution of drift diffusion equations using 2D finite difference method: application to a strained MOSFET device","language":"en"},"type":"monolingualtext"},"datatype":"monolingualtext"},"type":"statement","id":"Q2864895$CA3D15B1-430C-4884-889F-62A0A7B9AE95","rank":"normal"}],"P200":[{"mainsnak":{"snaktype":"value","property":"P200","hash":"5c730518cc9218dc5e31585719e37cb1d7559db0","datavalue":{"value":{"entity-type":"item","numeric-id":2793181,"id":"Q2793181"},"type":"wikibase-entityid"},"datatype":"wikibase-item"},"type":"statement","id":"Q2864895$4EF1802C-0433-472B-B79C-DFA08DA00F01","rank":"normal"}],"P1448":[{"mainsnak":{"snaktype":"value","property":"P1448","hash":"e6e0892a1980de1c46a95ec69b1640ea54f47b0e","datavalue":{"value":"The two-dimensional drift-diffusion model is used to calculate characteristics of the charge carrier in a strained MOSFET device. Numerical results are obtained with the use of a standard set of methods, i.e. the Gummel's method, the Gauss-Seidel's method and so on. From the point of view of the rounding errors evolution, the usage of the Gauss-Seidel method raises questions. As a whole, the paper is more like a technical report because well-known methods are used.","type":"string"},"datatype":"string"},"type":"statement","id":"Q2864895$27CDF840-A531-4454-A61F-85D48EA1CBB4","rank":"normal"}],"P1643":[{"mainsnak":{"snaktype":"value","property":"P1643","hash":"3b5614fcbad3c2f5cdd25661d4ff293b996f98a9","datavalue":{"value":{"entity-type":"item","numeric-id":1903393,"id":"Q1903393"},"type":"wikibase-entityid"},"datatype":"wikibase-item"},"type":"statement","qualifiers":{"P1659":[{"snaktype":"value","property":"P1659","hash":"68fbef22d888edc1ffa0d0b17b76803498bfaaf5","datavalue":{"value":{"amount":"+0.7486933469772339","unit":"1"},"type":"quantity"},"datatype":"quantity"}],"P1660":[{"snaktype":"value","property":"P1660","hash":"a327a09ea0305e98d5cf33bd4036320e19f2aed0","datavalue":{"value":{"entity-type":"item","numeric-id":6821328,"id":"Q6821328"},"type":"wikibase-entityid"},"datatype":"wikibase-item"}]},"qualifiers-order":["P1659","P1660"],"id":"Q2864895$CB056838-8546-4CDB-9B66-BEB30A8E341C","rank":"normal"},{"mainsnak":{"snaktype":"value","property":"P1643","hash":"2a935a5ec6d73b662f6cfb513018dc2381de9a8f","datavalue":{"value":{"entity-type":"item","numeric-id":4331566,"id":"Q4331566"},"type":"wikibase-entityid"},"datatype":"wikibase-item"},"type":"statement","qualifiers":{"P1659":[{"snaktype":"value","property":"P1659","hash":"d97826b8e5873ec2e63187b3296122aea841535d","datavalue":{"value":{"amount":"+0.7467924952507019","unit":"1"},"type":"quantity"},"datatype":"quantity"}],"P1660":[{"snaktype":"value","property":"P1660","hash":"a327a09ea0305e98d5cf33bd4036320e19f2aed0","datavalue":{"value":{"entity-type":"item","numeric-id":6821328,"id":"Q6821328"},"type":"wikibase-entityid"},"datatype":"wikibase-item"}]},"qualifiers-order":["P1659","P1660"],"id":"Q2864895$8A1C00FA-4538-41B1-8374-D1D706DAA5A4","rank":"normal"},{"mainsnak":{"snaktype":"value","property":"P1643","hash":"7ee026e4339b0416b9328248aaa77abe948bec33","datavalue":{"value":{"entity-type":"item","numeric-id":1899122,"id":"Q1899122"},"type":"wikibase-entityid"},"datatype":"wikibase-item"},"type":"statement","qualifiers":{"P1659":[{"snaktype":"value","property":"P1659","hash":"7286551c3420dbb488e391792073897c9b3e83a0","datavalue":{"value":{"amount":"+0.746174156665802","unit":"1"},"type":"quantity"},"datatype":"quantity"}],"P1660":[{"snaktype":"value","property":"P1660","hash":"a327a09ea0305e98d5cf33bd4036320e19f2aed0","datavalue":{"value":{"entity-type":"item","numeric-id":6821328,"id":"Q6821328"},"type":"wikibase-entityid"},"datatype":"wikibase-item"}]},"qualifiers-order":["P1659","P1660"],"id":"Q2864895$D2F98774-2691-4454-A792-4C7F6193623F","rank":"normal"},{"mainsnak":{"snaktype":"value","property":"P1643","hash":"59e201afed747e36399d67e3992ef1541f172795","datavalue":{"value":{"entity-type":"item","numeric-id":3829017,"id":"Q3829017"},"type":"wikibase-entityid"},"datatype":"wikibase-item"},"type":"statement","qualifiers":{"P1659":[{"snaktype":"value","property":"P1659","hash":"11c71ae59b1062b90058a96337f5f057a9384b5e","datavalue":{"value":{"amount":"+0.7359309792518616","unit":"1"},"type":"quantity"},"datatype":"quantity"}],"P1660":[{"snaktype":"value","property":"P1660","hash":"a327a09ea0305e98d5cf33bd4036320e19f2aed0","datavalue":{"value":{"entity-type":"item","numeric-id":6821328,"id":"Q6821328"},"type":"wikibase-entityid"},"datatype":"wikibase-item"}]},"qualifiers-order":["P1659","P1660"],"id":"Q2864895$022CFB8F-14B0-43B5-8F3D-102D462D9B19","rank":"normal"},{"mainsnak":{"snaktype":"value","property":"P1643","hash":"da150f6f5427ab11b581f0a8c22fe4e5784d21ed","datavalue":{"value":{"entity-type":"item","numeric-id":3154773,"id":"Q3154773"},"type":"wikibase-entityid"},"datatype":"wikibase-item"},"type":"statement","qualifiers":{"P1659":[{"snaktype":"value","property":"P1659","hash":"ee17ce01e16a505e0c5a4f1971b0f1900c8f65c8","datavalue":{"value":{"amount":"+0.7222966551780701","unit":"1"},"type":"quantity"},"datatype":"quantity"}],"P1660":[{"snaktype":"value","property":"P1660","hash":"a327a09ea0305e98d5cf33bd4036320e19f2aed0","datavalue":{"value":{"entity-type":"item","numeric-id":6821328,"id":"Q6821328"},"type":"wikibase-entityid"},"datatype":"wikibase-item"}]},"qualifiers-order":["P1659","P1660"],"id":"Q2864895$5AAD31AE-C541-4E91-A521-779FAE5130DF","rank":"normal"}]},"sitelinks":{"mardi":{"site":"mardi","title":"Numerical solution of drift diffusion equations using 2D finite difference method: application to a strained MOSFET device","badges":[],"url":"https://portal.mardi4nfdi.de/wiki/Numerical_solution_of_drift_diffusion_equations_using_2D_finite_difference_method:_application_to_a_strained_MOSFET_device"}}}}}