Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate (Q2864766): Difference between revisions

From MaRDI portal
Import240304020342 (talk | contribs)
Set profile property.
Importer (talk | contribs)
Changed an Item
 
Property / arXiv ID
 
Property / arXiv ID: 1108.5844 / rank
 
Normal rank

Latest revision as of 10:12, 19 April 2024

scientific article
Language Label Description Also known as
English
Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate
scientific article

    Statements

    Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate (English)
    0 references
    0 references
    0 references
    0 references
    26 November 2013
    0 references
    0 references
    0 references
    0 references
    0 references
    0 references
    0 references
    drift-diffusion-Poisson system
    0 references
    global weak solution
    0 references
    uniqueness
    0 references
    long-time behavior
    0 references
    0 references