Device benchmark comparisons via kinetic, hydrodynamic, and high-field models (Q1970136): Difference between revisions

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Property / cites work: High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor / rank
 
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Property / cites work: Efficient implementation of essentially nonoscillatory shock-capturing schemes. II / rank
 
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Latest revision as of 13:37, 29 May 2024

scientific article
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Device benchmark comparisons via kinetic, hydrodynamic, and high-field models
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    Device benchmark comparisons via kinetic, hydrodynamic, and high-field models (English)
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    16 August 2001
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    high-field model
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    domain decomposition
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    augmented drift-diffusion model
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    global kinetic model
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    hydrodynamic model
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    mobility calibration
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    channel region
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