The Velocity Overshoot in Semiconductors According to a Transport Model Derived from the Boltzmann Equation (Q2720999): Difference between revisions
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| Property / author: Armando Majorana / rank | |||
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| Property / MaRDI profile type: MaRDI publication profile / rank | |||
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| Property / full work available at URL: https://doi.org/10.1080/00411450008200003 / rank | |||
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| Property / OpenAlex ID: W2086790995 / rank | |||
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| Property / cites work: Q4283531 / rank | |||
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| Property / cites work: Laser field effects on plasma transport equations / rank | |||
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| Property / cites work: Trend to equilibrium of electron gas in a semiconductor according to the Boltzmann equation / rank | |||
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Latest revision as of 17:49, 3 June 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | The Velocity Overshoot in Semiconductors According to a Transport Model Derived from the Boltzmann Equation |
scientific article |
Statements
The Velocity Overshoot in Semiconductors According to a Transport Model Derived from the Boltzmann Equation (English)
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28 June 2001
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