High field mobility and diffusivity of an electron gas in silicon devices (Q3146401): Difference between revisions
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| Property / author: Armando Majorana / rank | |||
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| Property / MaRDI profile type: MaRDI publication profile / rank | |||
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| Property / OpenAlex ID: W1986464481 / rank | |||
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| Property / arXiv ID: cond-mat/0003457 / rank | |||
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| Property / cites work: Trend to equilibrium of electron gas in a semiconductor according to the Boltzmann equation / rank | |||
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Latest revision as of 16:57, 4 June 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | High field mobility and diffusivity of an electron gas in silicon devices |
scientific article |
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High field mobility and diffusivity of an electron gas in silicon devices (English)
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9 October 2002
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Boltzmann equation
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carrier transport
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semiconductor
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Chapman-Enskog method
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