Treatment of Ionized Impurity Scattering in Degenerate Semiconductors. Application of the Variational Technique in the Partial-Wave Method (Q3293276): Difference between revisions

From MaRDI portal
Added link to MaRDI item.
ReferenceBot (talk | contribs)
Changed an Item
(One intermediate revision by one other user not shown)
Property / MaRDI profile type
 
Property / MaRDI profile type: MaRDI publication profile / rank
 
Normal rank
Property / cites work
 
Property / cites work: Energy Band Structures in Semiconductors / rank
 
Normal rank
Property / cites work
 
Property / cites work: Variational Methods in Nuclear Collision Problems / rank
 
Normal rank
Property / cites work
 
Property / cites work: The application of variational methods to atomic scattering problems - I. The elastic scattering of electrons by hydrogen atoms / rank
 
Normal rank
Property / cites work
 
Property / cites work: Q5835073 / rank
 
Normal rank

Revision as of 19:54, 11 June 2024

scientific article
Language Label Description Also known as
English
Treatment of Ionized Impurity Scattering in Degenerate Semiconductors. Application of the Variational Technique in the Partial-Wave Method
scientific article

    Statements

    Treatment of Ionized Impurity Scattering in Degenerate Semiconductors. Application of the Variational Technique in the Partial-Wave Method (English)
    0 references
    0 references
    1962
    0 references
    0 references
    physics of many particles
    0 references