On calculating the electric potential for 2D silicon transistor with a silicon oxide nanochannel (Q3082245): Difference between revisions

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-Alexander Blokhin
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+Alexander Blokhin
@@ Property / author: Alexander Blokhin / rank @@
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+MaRDI publication profile
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+Non parabolic band transport in semiconductors: closure of the moment equations
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+Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
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+D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
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+Linear asymptotic stability of the equilibrium state for the 2-D MEP hydrodynamical model of charge transport in semiconductors
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+D numerical simulation of the MEP energy-transport model with a finite difference scheme
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+Q3398392
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+Numerical Method for 2D Simulation of a Silicon MESFET with a Hydrodynamical Model Based on the Maximum Entropy Principle
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+D numerical simulation of the mep mathematical model in ballistic diode problem
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+Q3575332
@@ Property / cites work: Q3575332 / rank @@
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@@ Property / cites work @@
+Q5574354
@@ Property / cites work: Q5574354 / rank @@
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+Q4151637
@@ Property / cites work: Q4151637 / rank @@
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+Publication:3082245