2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle (Q658896): Difference between revisions

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+Electron-phonon hydrodynamical model for semiconductors
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+Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
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+D numerical simulation of the MEP energy-transport model with a finite difference scheme
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+Numerical Coupling of Electric Circuit Equations and Energy-Transport Models for Semiconductors
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+On a hierarchy of macroscopic models for semiconductors
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+A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
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+Multirate linear multistep methods
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+Multirate ROW methods and latency of electric circuits
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+An energy-transport model for semiconductors derived from the Boltzmann equation.
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+TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION
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+Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
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+Non parabolic band transport in semiconductors: closure of the moment equations
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+Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
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