A stochastic model for diffusion in a semiconductor layer under the effect of an external potential and non-uniform temperature (Q2128739): Difference between revisions

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Property / full work available at URL: https://doi.org/10.1016/j.physa.2022.127197 / rank
 
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Property / cites work: Stochastic Resonance of Charge Carriers Diffusion in a Semiconductor Layer under a Nonuniform Low Temperature / rank
 
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Property / cites work: State observer for stochastic resonance in bistable system / rank
 
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Property / cites work: A novel underdamped continuous unsaturation bistable stochastic resonance method and its application / rank
 
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Property / cites work: Q2884695 / rank
 
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Latest revision as of 18:41, 28 July 2024

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A stochastic model for diffusion in a semiconductor layer under the effect of an external potential and non-uniform temperature
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    A stochastic model for diffusion in a semiconductor layer under the effect of an external potential and non-uniform temperature (English)
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    22 April 2022
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    stochastic resonance
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    charge carrier dynamics
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    semiconductor layer
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    impurities dynamics
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    lattice traps
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    hopping
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