An energy transport model describing heat generation and conduction in silicon semiconductors (Q637525): Difference between revisions

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Property / DOI: 10.1007/s10955-011-0247-2 / rank
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Property / author: Orazio Muscato / rank
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Property / author: Vincenza Di Stefano / rank
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Property / author: Vincenza Di Stefano / rank
 
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Latest revision as of 23:18, 9 December 2024

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An energy transport model describing heat generation and conduction in silicon semiconductors
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    An energy transport model describing heat generation and conduction in silicon semiconductors (English)
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    6 September 2011
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    Starting with the Bloch-Boltzmann-Peiels kinetic equations for the electron-phonon system, a macroscopic model is deduced. Both acoustic and optical phonons are taken into account while the energy band is assumed to be parabolic. The balance equations are written as moment equations with respect to suitable weight functions and the needed closure relations are obtained by using the maximum entropy principle. After introducing an appropriate scaling, the authors deduce an energy-transport model for electrons coupled to the Poisson equation for the electrostatic potential and to an energy equation for the crystal lattice temperature. In the limit case of electrons and phonons having the same temperature, an energy balance model is recovered.
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    semiconductors
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    Bloch-Boltzmann-Peierl equations
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    maximum entropy principle
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    thermal effects
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