Stationary energy models for semiconductor devices with incompletely ionized impurities (Q5704828): Difference between revisions
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| Property / author: Annegret Glitzky / rank | |||
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| Property / author: Annegret Glitzky / rank | |||
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| Property / MaRDI profile type: MaRDI publication profile / rank | |||
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| Property / full work available at URL: https://doi.org/10.1002/zamm.200510230 / rank | |||
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| Property / OpenAlex ID: W2138633923 / rank | |||
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| Property / cites work: Q3314921 / rank | |||
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| Property / cites work: Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors / rank | |||
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Latest revision as of 12:57, 11 June 2024
scientific article; zbMATH DE number 2229416
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Stationary energy models for semiconductor devices with incompletely ionized impurities |
scientific article; zbMATH DE number 2229416 |
Statements
Stationary energy models for semiconductor devices with incompletely ionized impurities (English)
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15 November 2005
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energy models
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mass
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charge
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and energy transport in hetero structures
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strongly coupled elliptic systems
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mixed boundary conditions
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implicit function theorem
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existence
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uniqueness
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regularity
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