Examining Performance Enhancement of p-Channel Strained-SiGe MOSFET Devices (Q5756187): Difference between revisions
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Latest revision as of 01:41, 20 March 2024
scientific article; zbMATH DE number 5186774
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Examining Performance Enhancement of p-Channel Strained-SiGe MOSFET Devices |
scientific article; zbMATH DE number 5186774 |
Statements
Examining Performance Enhancement of p-Channel Strained-SiGe MOSFET Devices (English)
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3 September 2007
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p-channel MOSFETs
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bandstructure effects
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quantum confinement
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strain
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performance enhancement
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semiconductors
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quantum mechanical space-quantization
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p-channel SiGe devices
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