Treatment of Ionized Impurity Scattering in Degenerate Semiconductors. Application of the Variational Technique in the Partial-Wave Method (Q3293276): Difference between revisions
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| Property / MaRDI profile type: MaRDI publication profile / rank | |||
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| Property / cites work: Energy Band Structures in Semiconductors / rank | |||
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| Property / cites work: Variational Methods in Nuclear Collision Problems / rank | |||
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| Property / cites work: The application of variational methods to atomic scattering problems - I. The elastic scattering of electrons by hydrogen atoms / rank | |||
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| Property / cites work: Q5835073 / rank | |||
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| Property / full work available at URL: https://doi.org/10.1103/physrev.126.1436 / rank | |||
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| Property / OpenAlex ID: W2081055502 / rank | |||
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Latest revision as of 10:47, 30 July 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Treatment of Ionized Impurity Scattering in Degenerate Semiconductors. Application of the Variational Technique in the Partial-Wave Method |
scientific article |
Statements
Treatment of Ionized Impurity Scattering in Degenerate Semiconductors. Application of the Variational Technique in the Partial-Wave Method (English)
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1962
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physics of many particles
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