Finite-length mask effects in the isolation oxidation of silicon (Q4344304): Difference between revisions
From MaRDI portal
Added link to MaRDI item. |
Set OpenAlex properties. |
||
| (3 intermediate revisions by 2 users not shown) | |||
| Property / author | |||
| Property / author: Jonathan D. Evans / rank | |||
| Property / author | |||
| Property / author: Jonathan D. Evans / rank | |||
Normal rank | |||
| Property / MaRDI profile type | |||
| Property / MaRDI profile type: MaRDI publication profile / rank | |||
Normal rank | |||
| Property / OpenAlex ID | |||
| Property / OpenAlex ID: W2090999609 / rank | |||
Normal rank | |||
Latest revision as of 00:09, 20 March 2024
scientific article; zbMATH DE number 1033941
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Finite-length mask effects in the isolation oxidation of silicon |
scientific article; zbMATH DE number 1033941 |
Statements
Finite-length mask effects in the isolation oxidation of silicon (English)
0 references
15 July 1997
0 references
microelectronics
0 references
oxidation
0 references
integrated circuit
0 references
submicron silicon-isolation technologies
0 references
