Continuum modeling of charged vacancy migration in elastic dielectric solids, with application to perovskite thin films (Q1939763): Difference between revisions
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Property / DOI: 10.1016/j.mechrescom.2007.08.002 / rank | |||
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Property / author: John D. Clayton / rank | |||
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Property / author: Peter W. Chung / rank | |||
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Property / author: Michael A. Grinfeld / rank | |||
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Property / full work available at URL: https://doi.org/10.1016/j.mechrescom.2007.08.002 / rank | |||
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Property / OpenAlex ID: W2071873242 / rank | |||
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Property / cites work: Q5828977 / rank | |||
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Property / cites work: Q3235736 / rank | |||
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Property / DOI: 10.1016/J.MECHRESCOM.2007.08.002 / rank | |||
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Latest revision as of 14:16, 16 December 2024
scientific article
Language | Label | Description | Also known as |
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English | Continuum modeling of charged vacancy migration in elastic dielectric solids, with application to perovskite thin films |
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Continuum modeling of charged vacancy migration in elastic dielectric solids, with application to perovskite thin films (English)
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5 March 2013
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electromechanics
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dielectric
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diffusion
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vacancies
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thin films
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