Device benchmark comparisons via kinetic, hydrodynamic, and high-field models (Q1970136): Difference between revisions
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| Property / author: Irene Martínez Gamba / rank | |||
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| Property / cites work: High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor / rank | |||
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| Property / cites work: Efficient implementation of weighted ENO schemes / rank | |||
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| Property / cites work: Efficient implementation of essentially nonoscillatory shock-capturing schemes. II / rank | |||
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Latest revision as of 13:37, 29 May 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Device benchmark comparisons via kinetic, hydrodynamic, and high-field models |
scientific article |
Statements
Device benchmark comparisons via kinetic, hydrodynamic, and high-field models (English)
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16 August 2001
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high-field model
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domain decomposition
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augmented drift-diffusion model
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global kinetic model
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hydrodynamic model
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mobility calibration
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channel region
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