Simulation of an \(n^+\)-\(n\)-\(n^+\) diode by using globally-hyperbolically-closed high-order moment models (Q461266): Difference between revisions

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Property / author: Yan Li Wang / rank
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Property / author
 
Property / author: Yan Li Wang / rank
 
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Property / Mathematics Subject Classification ID: 82C70 / rank
 
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Property / Mathematics Subject Classification ID: 35Q20 / rank
 
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Property / Mathematics Subject Classification ID: 76P05 / rank
 
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Property / zbMATH DE Number: 6353589 / rank
 
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high-order moment equations
Property / zbMATH Keywords: high-order moment equations / rank
 
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Boltzmann transport equation
Property / zbMATH Keywords: Boltzmann transport equation / rank
 
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extended hydrodynamic models
Property / zbMATH Keywords: extended hydrodynamic models / rank
 
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semiconductor device simulation
Property / zbMATH Keywords: semiconductor device simulation / rank
 
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Property / MaRDI profile type: MaRDI publication profile / rank
 
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Property / full work available at URL: https://doi.org/10.1007/s10915-013-9781-1 / rank
 
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Property / OpenAlex ID: W2109073015 / rank
 
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Property / cites work
 
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Latest revision as of 04:08, 9 July 2024

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Simulation of an \(n^+\)-\(n\)-\(n^+\) diode by using globally-hyperbolically-closed high-order moment models
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    Simulation of an \(n^+\)-\(n\)-\(n^+\) diode by using globally-hyperbolically-closed high-order moment models (English)
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    10 October 2014
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    high-order moment equations
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    Boltzmann transport equation
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    extended hydrodynamic models
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    semiconductor device simulation
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