Perturbation-Moment Method: Application to Band Structure of Impure Semiconductors (Q5512147): Difference between revisions

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Property / cites work: One-Dimensional Impurity Bands / rank
 
Normal rank
Property / cites work
 
Property / cites work: Electron Levels in a One-Dimensional Random Lattice / rank
 
Normal rank
Property / cites work
 
Property / cites work: The modification of electron energy levels by impurity atoms / rank
 
Normal rank
Property / cites work
 
Property / cites work: Energy Levels of a Disordered Alloy / rank
 
Normal rank
Property / cites work
 
Property / cites work: Energy Levels of a Disordered Alloy / rank
 
Normal rank
Property / cites work
 
Property / cites work: Spectral representations of the mass and polarisation operators at arbitrary temperatures / rank
 
Normal rank
Property / cites work
 
Property / cites work: Thomas-Fermi Approach to Impure Semiconductor Band Structure / rank
 
Normal rank
Property / cites work
 
Property / cites work: Q5830588 / rank
 
Normal rank
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Latest revision as of 21:36, 11 June 2024

scientific article; zbMATH DE number 3223646
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Perturbation-Moment Method: Application to Band Structure of Impure Semiconductors
scientific article; zbMATH DE number 3223646

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