drift-diffusion model (Q6675396): Difference between revisions
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Updated [en] alias: van Roosbroeck model |
Created claim: description (P1459): Private communication by Thomas Koprucki (Nov. 2025): Drift-diffusion models are closely related to reaction-diffusion models, Poisson-Nernst-Planck-models, semiconductor equation. |
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Private communication by Thomas Koprucki (Nov. 2025): Drift-diffusion models are closely related to reaction-diffusion models, Poisson-Nernst-Planck-models, semiconductor equation. | |||
| Property / description: Private communication by Thomas Koprucki (Nov. 2025): Drift-diffusion models are closely related to reaction-diffusion models, Poisson-Nernst-Planck-models, semiconductor equation. / rank | |||
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Revision as of 13:20, 1 December 2025
mathematical model describing the semi-classical transport of free electrons and holes in a self-consistent electric field
- van Roosbroeck model
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | drift-diffusion model |
mathematical model describing the semi-classical transport of free electrons and holes in a self-consistent electric field |
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The drift-diffusion system describes the semi-classical transport of free electrons and holes in a self-consistent electric field using a drift-diffusion approximation. It became the standard model to describe the current flow in semiconductor devices such as diodes, transistors, LEDs, solar cells and lasers, as well as quantum nanostructures and organic semiconductors.
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Private communication by Thomas Koprucki (Nov. 2025): Drift-diffusion models are closely related to reaction-diffusion models, Poisson-Nernst-Planck-models, semiconductor equation.
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