3D NUMERICAL SIMULATION OF TRANSIENT PROCESSES IN SEMICONDUCTOR DEVICES (Q3990351): Difference between revisions
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Revision as of 23:39, 4 March 2024
scientific article
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English | 3D NUMERICAL SIMULATION OF TRANSIENT PROCESSES IN SEMICONDUCTOR DEVICES |
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3D NUMERICAL SIMULATION OF TRANSIENT PROCESSES IN SEMICONDUCTOR DEVICES (English)
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28 June 1992
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absolute stability
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charge transport
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submicron semiconductor devices
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3D numerical simulation
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semi-implicit scheme
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continuity equations
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Poisson equation
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bipolar transistor
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Numerical results
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