High electric field approximation to charge transport in semiconductor devices (Q1195617): Difference between revisions

From MaRDI portal
RedirectionBot (talk | contribs)
Changed an Item
Import240304020342 (talk | contribs)
Set profile property.
Property / MaRDI profile type
 
Property / MaRDI profile type: MaRDI publication profile / rank
 
Normal rank

Revision as of 02:30, 5 March 2024

scientific article
Language Label Description Also known as
English
High electric field approximation to charge transport in semiconductor devices
scientific article

    Statements

    High electric field approximation to charge transport in semiconductor devices (English)
    0 references
    0 references
    0 references
    0 references
    6 January 1993
    0 references
    asymptotic expansion
    0 references
    Legendre expansion
    0 references
    charge transport
    0 references
    scattering of electrons
    0 references
    acoustic and optical phonons
    0 references
    electric field
    0 references
    band structures
    0 references
    Boltzmann equation
    0 references
    semiconductor devices
    0 references

    Identifiers

    0 references
    0 references
    0 references
    0 references
    0 references
    0 references
    0 references