EXTENDED HYDRODYNAMIC MODEL FOR THE COUPLED ELECTRON-PHONON SYSTEM IN SILICON SEMICONDUCTORS (Q3403891): Difference between revisions
From MaRDI portal
Set profile property. |
Set OpenAlex properties. |
||
Property / full work available at URL | |||
Property / full work available at URL: https://doi.org/10.1142/9789812772350_0062 / rank | |||
Normal rank | |||
Property / OpenAlex ID | |||
Property / OpenAlex ID: W2017072457 / rank | |||
Normal rank |
Latest revision as of 23:08, 19 March 2024
scientific article
Language | Label | Description | Also known as |
---|---|---|---|
English | EXTENDED HYDRODYNAMIC MODEL FOR THE COUPLED ELECTRON-PHONON SYSTEM IN SILICON SEMICONDUCTORS |
scientific article |
Statements
EXTENDED HYDRODYNAMIC MODEL FOR THE COUPLED ELECTRON-PHONON SYSTEM IN SILICON SEMICONDUCTORS (English)
0 references
5 February 2010
0 references
semiconductor devices
0 references
Boltzmann-Poisson system for semiconductors
0 references
hydrodynamic model
0 references
maximum entropy principle
0 references