Self-similar solutions for diffusion in semiconductors (Q4307818): Difference between revisions
From MaRDI portal
Set profile property. |
ReferenceBot (talk | contribs) Changed an Item |
||
| Property / cites work | |||
| Property / cites work: Self-similar solutions for infiltration of dopant into semiconductors / rank | |||
Normal rank | |||
| Property / cites work | |||
| Property / cites work: Q5848416 / rank | |||
Normal rank | |||
| Property / cites work | |||
| Property / cites work: Mathematical analysis of a model for substitutional diffusion / rank | |||
Normal rank | |||
| Property / cites work | |||
| Property / cites work: The existence of similar solutions for some laminar boundary layer problems / rank | |||
Normal rank | |||
Revision as of 18:10, 22 May 2024
scientific article; zbMATH DE number 646902
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Self-similar solutions for diffusion in semiconductors |
scientific article; zbMATH DE number 646902 |
Statements
Self-similar solutions for diffusion in semiconductors (English)
0 references
4 October 1994
0 references
development of concentration profiles
0 references
profiles of self-similar form
0 references
asymptotic properties
0 references
