Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations (Q1010033): Difference between revisions
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Latest revision as of 10:26, 1 July 2024
scientific article
| Language | Label | Description | Also known as |
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| English | Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations |
scientific article |
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Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations (English)
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3 April 2009
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non-quasi-static effect
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time domain
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frequency domain
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surface-potential
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MOSFET compact model
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