On modelling thermal oxidation of Silicon II: numerical aspects (Q4493652): Difference between revisions

From MaRDI portal
ReferenceBot (talk | contribs)
Changed an Item
Set OpenAlex properties.
 
label / enlabel / en
 
On modelling thermal oxidation of Silicon II: numerical aspects
Property / full work available at URL
 
Property / full work available at URL: https://doi.org/10.1002/(sici)1097-0207(20000110/30)47:1/3<359::aid-nme775>3.0.co;2-7 / rank
 
Normal rank
Property / OpenAlex ID
 
Property / OpenAlex ID: W1998346759 / rank
 
Normal rank
Property / title
 
On modelling thermal oxidation of Silicon II: numerical aspects (English)
Property / title: On modelling thermal oxidation of Silicon II: numerical aspects (English) / rank
 
Normal rank

Latest revision as of 09:50, 30 July 2024

scientific article; zbMATH DE number 1487159
Language Label Description Also known as
English
On modelling thermal oxidation of Silicon II: numerical aspects
scientific article; zbMATH DE number 1487159

    Statements

    0 references
    0 references
    0 references
    14 July 2002
    0 references
    finite element method
    0 references
    discontinuous interpolation
    0 references
    oxidation of silicon
    0 references
    silicon-silicon dioxide interface
    0 references
    level-set method
    0 references
    large expansion
    0 references
    staggered scheme
    0 references
    On modelling thermal oxidation of Silicon II: numerical aspects (English)
    0 references

    Identifiers