Simulation of an \(n^+\)-\(n\)-\(n^+\) diode by using globally-hyperbolically-closed high-order moment models (Q461266): Difference between revisions
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Property / Mathematics Subject Classification ID: 82C70 / rank | |||
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Property / Mathematics Subject Classification ID: 35Q20 / rank | |||
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Property / Mathematics Subject Classification ID: 76P05 / rank | |||
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Property / zbMATH DE Number: 6353589 / rank | |||
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high-order moment equations | |||
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Boltzmann transport equation | |||
Property / zbMATH Keywords: Boltzmann transport equation / rank | |||
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extended hydrodynamic models | |||
Property / zbMATH Keywords: extended hydrodynamic models / rank | |||
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semiconductor device simulation | |||
Property / zbMATH Keywords: semiconductor device simulation / rank | |||
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Revision as of 13:51, 30 June 2023
scientific article
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English | Simulation of an \(n^+\)-\(n\)-\(n^+\) diode by using globally-hyperbolically-closed high-order moment models |
scientific article |
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Simulation of an \(n^+\)-\(n\)-\(n^+\) diode by using globally-hyperbolically-closed high-order moment models (English)
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10 October 2014
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high-order moment equations
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Boltzmann transport equation
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extended hydrodynamic models
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semiconductor device simulation
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