Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver (Q3156132)

From MaRDI portal
Revision as of 18:58, 31 August 2023 by Importer (talk | contribs) (‎Created a new Item)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
scientific article
Language Label Description Also known as
English
Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
scientific article

    Statements

    Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver (English)
    0 references
    0 references
    0 references
    0 references
    6 January 2005
    0 references
    Electronic engineering
    0 references
    Monte Carlo simulation
    0 references
    Semiconductor devices
    0 references
    Silicon
    0 references

    Identifiers

    0 references
    0 references
    0 references
    0 references
    0 references