Multiple Steady-State Solutions in a Multijunction Semiconductor Device

DOI10.1137/0151007zbMath0739.34028OpenAlexW2020057426MaRDI QIDQ3971170

Michael J. Ward, F. M. Odeh, Luis G. M. Reyna

Publication date: 25 June 1992

Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1137/0151007

zbMATH Keywords

drift-diffusion equationssemiconductor physicsShockley-Read-Hall recombinationmultiple steady-state solutionsasymptotic and numerical techniquesmultijunction semiconductor device

Mathematics Subject Classification ID

Nonlinear boundary value problems for ordinary differential equations (34B15) Singular perturbations in context of PDEs (35B25) Asymptotic expansions of solutions to PDEs (35C20) Numerical solution of boundary value problems involving ordinary differential equations (65L10) Asymptotic expansions of solutions to ordinary differential equations (34E05) Numerical analysis in abstract spaces (65J99)

Related Items (8)

Stationary equations for charge carriers in semiconductors including electron-hole scattering ⋮ On the Modeling and Simulation of Reaction-Transfer Dynamics in Semiconductor-Electrolyte Solar Cells ⋮ On the stationary semiconductor equations arising in modeling an LBIC technique ⋮ On exponential ill-conditioning and internal layer behavior ⋮ Non‐Zero Space Charge Approximation of Thyristors ⋮ Unnamed Item ⋮ Computational Study on Hysteresis of Ion Channels: Multiple Solutions to Steady-State Poisson-Nernst-Planck Equations ⋮ Parabolic-elliptic system modeling biological ion channels

Uses Software

• COLSYS

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