Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model (Q543757)

From MaRDI portal
Revision as of 06:56, 30 January 2024 by Import240129110113 (talk | contribs) (Added link to MaRDI item.)
scientific article
Language Label Description Also known as
English
Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model
scientific article

    Statements

    Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model (English)
    0 references
    0 references
    0 references
    0 references
    17 June 2011
    0 references
    Parameter extraction for semiconductor devices is an important tool in modern semiconductor device design and performance specification. The aim of parameter extraction is to recover material parameters of devices from measurement of device characteristics such as e. g. current-to-voltage (I-V) data and voltage-to-capacitance (C-V) data. The parameters that are of interests are mainly the doping profile and carrier mobilities. In this paper, an inverse problem related to the Boltzmann-Poisson system of equations for transport of electrons in semiconductor devices is studied. Linear reconstructions algorithms as well as nonlinear algorithms of Newton type to recover numerically the doping profile function from measurement of device characteristics (I-V) are presented. To reduce the degree of ill-posedness of the inverse problems the unknown doping profile is parametrized to decrease the number of unknowns in the inverse problems. Although the transport of charges in semiconductor devices is best modeled by the Boltzmann-Poisson system (BP) of equations the majority of works on semiconductor inverse problems uses for the model of the charged particles transport the drift-diffusion-Poisson system (DDP) of equations. The main objective of the paper is to study numerically reconstruction problems for the more accurate BP model and characterize the difference between reconstructions obtained with the DDP model. It follows from detailed numerical reconstruction results based on synthetic data (generated by BP model) that two models can give sufficiently different results. As the size of the device is getting larger or the noise level in the data getting higher, the differences in reconstructions are indistinguishable.
    0 references
    Boltzmann-Poisson system
    0 references
    semiconductor devices
    0 references
    doping profile
    0 references
    inverse problems
    0 references
    parameter identification
    0 references
    inverse doping
    0 references
    drift-diffusion
    0 references

    Identifiers