A mixed-finite volume element coupled with the method of characteristic fractional step difference for simulating transient behavior of semiconductor device of heat conductor and its numerical analysis

DOI10.1007/s10255-017-0721-yzbMath1382.82048MaRDI QIDQ1690583

Qing Yang, Tong-jun Sun, Chang-Feng Li, Yi-Rang Yuan

Publication date: 19 January 2018

Published in: Acta Mathematicae Applicatae Sinica. English Series (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s10255-017-0721-y

zbMATH Keywords

numerical simulation; mixed finite volume element; modified characteristic fractional step difference; second-order estimate in \(L^{2}\) norm; transient behavior of three-dimensional semiconductor device

Mathematics Subject Classification ID

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