ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS

DOI10.1108/eb009979zbMath0619.65116OpenAlexW4230421617MaRDI QIDQ3756463

M. S. Mock

Publication date: 1983

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb009979

zbMATH Keywords

mesh generationmesh refinementelectrostatic potentialsemiconductor device modelsquasi-Fermi potentialsstationary continuity equations

Mathematics Subject Classification ID

Nonlinear boundary value problems for linear elliptic equations (35J65) Stability and convergence of numerical methods for boundary value problems involving PDEs (65N12) Applications to the sciences (65Z05) Motion of charged particles (78A35)

Related Items (9)

On a Petrov-Galerkin method for the electrical and thermal behaviour of semiconductor devices in two dimensions ⋮ ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II ⋮ ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, III ⋮ DELAUNAY PARTITIONING IN THREE DIMENSIONS AND SEMICONDUCTOR MODELS ⋮ Three-dimensional exponentially fitted conforming tetrahedral finite elements for the semiconductor continuity equations ⋮ ANALYSIS OF A DISCRETIZATION ALGORITHM FOR TIME‐DEPENDENT SEMICONDUCTOR MODELS ⋮ Hexahedral finite elements for the stationary semiconductor device equations ⋮ A triangular mixed finite element method for the stationary semiconductor device equations ⋮ An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations

Cites Work

• Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
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