On a mathematical model for hot carrier injection in semiconductors

DOI10.1002/MMA.1670171503zbMath0812.35137OpenAlexW1979574620MaRDI QIDQ4320633

Naoufel Ben Abdallah, Christian Schmeiser, Pierre Degond

Publication date: 23 February 1995

Published in: Mathematical Methods in the Applied Sciences (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/mma.1670171503

zbMATH Keywords

asymptotic analysis for low temperaturescollisionless transport model for electrons in a semiconductor

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Singular perturbations in context of PDEs (35B25) Motion of charged particles (78A35)

Related Items (4)

Stationary voltage current characteristics of a plasma ⋮ The Child‐Langmuir asymptotics for semiconductors including phonon interactions ⋮ The quantum Child-Langmuir problem ⋮ The Child–Langmuir limit for semiconductors: a numerical validation

Cites Work

• The Child–Langmuir Law for the Boltzmann Equation of Semiconductors

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