AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS (Q4872545)

From MaRDI portal
Revision as of 15:54, 29 February 2024 by RedirectionBot (talk | contribs) (‎Removed claim: author (P16): Item:Q1970153)
scientific article; zbMATH DE number 859311
Language Label Description Also known as
English
AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS
scientific article; zbMATH DE number 859311

    Statements

    AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS (English)
    0 references
    0 references
    0 references
    0 references
    17 June 1996
    0 references
    multi-dimensional hydrodynamic model
    0 references
    semiconductor device simulation
    0 references
    energy method
    0 references
    boundary integrals
    0 references
    finite element
    0 references
    Boltzmann transport equation
    0 references

    Identifiers

    0 references
    0 references
    0 references
    0 references
    0 references
    0 references