Examining Performance Enhancement of p-Channel Strained-SiGe MOSFET Devices

DOI10.1007/978-3-540-70942-8_22zbMath1137.82352OpenAlexW1533562472MaRDI QIDQ5756187

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Publication date: 3 September 2007

Published in: Numerical Methods and Applications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/978-3-540-70942-8_22

zbMATH Keywords

strainsemiconductorsperformance enhancementquantum confinementbandstructure effectsp-channel MOSFETsp-channel SiGe devicesquantum mechanical space-quantization

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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