doping profile (Q6673929)

From MaRDI portal
Revision as of 12:14, 10 November 2025 by MathModDB (talk | contribs) (‎Changed label, description and/or aliases in en, and other parts)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)





intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties
Language Label Description Also known as
English
doping profile
intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties

    Statements