Pages that link to "Item:Q2367504"
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The following pages link to Asymptotic behavior at the boundary of a semiconductor device in two space dimensions (Q2367504):
Displayed 3 items.
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme (Q870557) (← links)
- Behavior of the potential at the pn-junction for a model in semiconductor theory (Q1173683) (← links)
- 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods (Q2490272) (← links)