Pages that link to "Item:Q2384186"
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The following pages link to Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models (Q2384186):
Displaying 3 items.
- Quantum-corrected drift-diffusion models: Solution fixed point map and finite element approximation (Q1005417) (← links)
- Numerical algorithms based on Galerkin methods for the modeling of reactive interfaces in photoelectrochemical (PEC) solar cells (Q2412210) (← links)
- Quantum Semiconductor Models (Q2904898) (← links)
