Pages that link to "Item:Q3232226"
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The following pages link to Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering (Q3232226):
Displayed 16 items.
- Thermal capture of electrons in silicon (Q769011) (← links)
- The effect of uniaxial stress on band structure and electron mobility of silicon (Q1010026) (← links)
- The \(p-n\) junction under nonuniform strains: general theory and application to photovoltaics (Q2201294) (← links)
- An improved 2D-3D model for charge transport based on the maximum entropy principle (Q2201622) (← links)
- Experimental Investigations of the Electronic Band Structure of Solids (Q3247026) (← links)
- Phonon-Drag Thermomagnetic Effects in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Germanium. I. General Survey (Q3248860) (← links)
- Ultrasonic Attenuation by Electrons in Metals (Q3255193) (← links)
- Effect of Random Inhomogeneities on Electrical and Galvanomagnetic Measurements (Q3269873) (← links)
- Theory of Electron-Phonon Interactions (Q3269907) (← links)
- Variational Treatment of Warm Electrons in Nonpolar Crystals (Q3274019) (← links)
- Distribution Functions for Hot Electrons in Many-Valley Semiconductors (Q3275738) (← links)
- Electron Transport at High Temperatures in the Presence of Impurities (Q3276611) (← links)
- Drift Velocity and Anisotropy of Hot Electrons in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>Germanium (Q3287129) (← links)
- Simulation of silicon semiconductor devices by means of a direct Boltzmann‐Poisson solver (Q3425630) (← links)
- Thermal Conductivity of Solids IV: Resonance Fluorescence Scattering of Phonons by Donor Electrons in Germanium (Q5732516) (← links)
- Evaluation of Thermoelectric Properties of Ag<sub>0.366</sub>Sb<sub>0.558</sub>Te (Q6087111) (← links)