Pages that link to "Item:Q3521666"
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The following pages link to GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL (Q3521666):
Displaying 12 items.
- On uniform decay of the entropy for reaction-diffusion systems (Q282380) (← links)
- Well-posedness on a new hydrodynamic model of the fluid with the dilute charged particles (Q338442) (← links)
- Uniform-in-time bounds for approximate solutions of the drift-diffusion system (Q670303) (← links)
- Classical solutions of drift-diffusion equations for semiconductor devices: The two-dimensional case (Q1030050) (← links)
- On the entropy method and exponential convergence to equilibrium for a recombination-drift-diffusion system with self-consistent potential (Q1996404) (← links)
- Uniform convergence to equilibrium for a family of drift-diffusion models with trap-assisted recombination and the limiting Shockley-Read-Hall model (Q2210144) (← links)
- Optimal decay rates of the solution for generalized Poisson-Nernst-Planck-Navier-Stokes equations in \(\mathbb{R}^3\) (Q2244726) (← links)
- A Generalized Poisson--Nernst--Planck--Navier--Stokes Model on the Fluid with the Crowded Charged Particles: Derivation and Its Well-Posedness (Q2821656) (← links)
- Analysis of electronic models for solar cells including energy resolved defect densities (Q3095573) (← links)
- The entropy dissipation method for spatially inhomogeneous reaction–diffusion-type systems (Q3560349) (← links)
- The 3D transient semiconductor equations with gradient-dependent and interfacial recombination (Q4973265) (← links)
- Existence, Decay Time and Light Yield for a Reaction-Diffusion-Drift Equation in the Continuum Physics of Scintillators (Q5153001) (← links)