Pages that link to "Item:Q5957383"
From MaRDI portal
The following pages link to A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices (Q5957383):
Displaying 20 items.
- A brief survey of the discontinuous Galerkin method for the Boltzmann-Poisson equations (Q435141) (← links)
- Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model (Q543757) (← links)
- A discontinuous Galerkin solver for Boltzmann-Poisson systems in nano-devices (Q658301) (← links)
- Simulation of shock wave diffraction over \(90^\circ \) sharp corner in gases of arbitrary statistics (Q658516) (← links)
- Galerkin methods for Boltzmann-Poisson transport with reflection conditions on rough boundaries (Q1656626) (← links)
- A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods. (Q1873343) (← links)
- Discontinuous Galerkin deterministic solvers for a Boltzmann-Poisson model of hot electron transport by averaged empirical pseudopotential band structures (Q2309885) (← links)
- Multigroup equations to the hot-electron hot-phonon system in III--V compound semiconductors (Q2488973) (← links)
- 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods (Q2490272) (← links)
- On the Cauchy problem for spatially homogeneous semiconductor Boltzmann equations: existence and uniqueness (Q2504744) (← links)
- A direct multigroup-WENO solver for the 2D non-stationary Boltzmann--Poisson system for GaAs devices: GaAs-MESFET (Q2581696) (← links)
- Positivity-preserving discontinuous Galerkin schemes for linear Vlasov-Boltzmann transport equations (Q3117205) (← links)
- Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver (Q3156132) (← links)
- Simulation of silicon semiconductor devices by means of a direct Boltzmann‐Poisson solver (Q3425630) (← links)
- Auger effect in the generalized kinetic theory of electrons and holes (Q3438747) (← links)
- On the Modeling and Simulation of Reaction-Transfer Dynamics in Semiconductor-Electrolyte Solar Cells (Q3455383) (← links)
- Semicontinuous Kinetic Theory of the Relaxation of Electrons in GaAs (Q5462782) (← links)
- A Multigroup Approach to the Coupled Electron‐Phonon Boltzmann Equations in InP (Q5462785) (← links)
- Adaptive energy discretization of the semiconductor Boltzmann equation (Q5758142) (← links)
- Convergence of a Direct Simulation Monte Carlo Method for the Space Inhomogeneous Semiconductor Boltzmann Equations with Multi-valley (Q6178107) (← links)