A Nonlinear Eigenvalue Problem Modelling the Avalanche Effect in Semiconductor Diodes

DOI10.1137/0516091MaRDI QIDQ3704215zbMATH OpenOpenAlexFDO

Authors Peter Alexander Markowich

Publication date 1985

Published in SIAM Journal on Mathematical Analysis (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1137/0516091

zbMATH Keywords

avalanche effect in semiconductor diodesimpact ionizationtwo-point boundary value problemunbounded solution continua

Mathematics Subject Classification ID

Nonlinear boundary value problems for ordinary differential equations (34B15) Spectral theory; eigenvalue problems on manifolds (58C40) Electromagnetic theory (general) (78A25)

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• A closed-form analytic model to study the characteristics of avalanche photodiodes
• AN EXPONENTIAL FITTING SCHEME FOR THE ELECTROTHERMAL DEVICE EQUATIONS SPECIFICALLY FOR THE SIMULATION OF AVALANCHE GENERATION
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• Studies on dynamic avalanche and current filaments in high-voltage diodes

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