Boltzmann approximation for holes

Boltzmann approximation for holes; for use in semiconductor physics

Named after

Formula(s) and Quantities

$p (ψ, ϕ_{p}) = N_{v} \exp (\frac{q (ϕ_{p} - ψ) + E_{v}}{k_{B} T})$
$q$ represents elementary charge
$E_{v}$ represents band edge energy for valence band
$N_{v}$ represents effective density of states in the valence band
$T$ represents temperature
$ϕ_{p}$ represents quasi-Fermi potential for holes
$ψ$ represents electric potential
$k_{B}$ represents Boltzmann constant
$p$ represents hole density

Further links

Item	Property
drift-diffusion model	contains

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