Comparing the MESFET and HEMT models for efficient circuit design

DOI10.1002/JNM.641MaRDI QIDQ3442827zbMATH OpenOpenAlexFDO

Authors R. Touhami, Mustapha C. E. Yagoub, H. Baudrand

Publication date 23 May 2007

Published in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/jnm.641

zbMATH Keywords

characterizationDCMESFET/HEMT Modellingmicrowave devices

Mathematics Subject Classification ID

Circuits, networks (94C99)

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(5)

• Modelling DC characteristics of GaAs MESFETs in a wide range of temperatures
• Modifications of the DC Raytheon-Statz model for SiC MESFETs
• Comparison of different methodologies for parameter extraction in circuit design
• Comparison of HEMT non-linear model extraction approaches based on small signal and on large signal measurements
• Non‐linear performance comparison for FD and PD SOI MOSFETs based on the integral function method and Volterra modelling

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