Experimental data of "High-field 1/f noise in hBN-encapsulated graphene transistors"
DOI10.5281/zenodo.7632159Zenodo7632159MaRDI QIDQ6697150FDOQ6697150
Dataset published at Zenodo repository.
D. Mele, T. Taniguchi, B. Plaçais, V. Garnier, J.m. Berroir, C. Voisin, C. Journet, E. Baudin, K. Watanabe, A. Schmitt, Gwendal Feve, M. Rosticher, C. Maestre
Publication date: 11 February 2023
Copyright license: Creative Commons Attribution 4.0 International
Current-to-voltage characteristics along with flicker noise amplitude (A factor, description given in the paper) of the devices studied in the main and supplementary text of the article by A. Schmitt et al. Dimensions of devices are provided in the article
This page was built for dataset: Experimental data of "High-field 1/f noise in hBN-encapsulated graphene transistors"
