ELECTRICAL EXPRESSION OF SPIN ACCUMULATION IN FERROMAGNET/SEMICONDUCTOR STRUCTURES

DOI10.1142/S021798490701395XMaRDI QIDQ3507632zbMATH OpenOpenAlexFDO

Authors Łukasz Cywiński, Hanan Dery, Parin Dalal, L. J. Sham

Publication date 20 June 2008

Published in Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL https://arxiv.org/abs/0709.2707

zbMATH Keywords

spin diffusionspin injection/extractionspintronic devices

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Abstract: We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the Schottky barrier, especially the counter-intuitive spin polarization direction in the semiconductor due to current extraction seen in recent experiments. A possible explanation of this phenomenon involves taking into account the spin-dependent inelastic scattering via the bound states in the interface region. The quantum-mechanical treatment of spin transport through the interface is coupled with the semiclassical description of transport in the adjoining media, in which we take into account the in-plane spin diffusion along the interface in the planar geometry used in experiments. The theory forms the basis of the calculation of spin-dependent current flow in multi-terminal systems, consisting of a semiconductor channel with many ferromagnetic contacts attached, in which the spin accumulation created by spin injection/extraction can be efficiently sensed by electrical means. A three-terminal system can be used as a magnetic memory cell with the bit of information encoded in the magnetization of one of the contacts. Using five terminals we construct a reprogrammable logic gate, in which the logic inputs and the functionality are encoded in magnetizations of the four terminals, while the current out of the fifth one gives a result of the operation.

Recommendations

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Cites work

• Discrete transparent boundary conditions for the Schrödinger equation: fast calculation, approximation, and stability
• scientific article; zbMATH DE number 3135650 (Why is no real title available?)
• scientific article; zbMATH DE number 3150729 (Why is no real title available?)

Cited in

(4)

• Amplification of the induced ferromagnetism in diluted magnetic semiconductor
• Concepts in spin electronics.
• Selective spin injection controlled by electrical way in ferromagnet/quantum dot/semiconductor system
• Electric tunable of electron spin polarization in hybrid magnetic-electric barrier structures

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