FETMOSS: a software tool for 2D simulation of double-gate MOSFET

DOI10.1002/JNM.613MaRDI QIDQ3423186zbMATH OpenOpenAlexFDO

Authors Tarek M. Abdolkader, Wael Fikry Farouk, O. A. Omar, Mahmoud Fathy Mahmoud Hassan

Publication date 20 February 2007

Published in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/jnm.613

zbMATH Keywords

device simulationdouble-gate MOSFETFEMFETMOSSfinite difference methodPoisson equationquantum-mechanical effectsSchrödinger equationtransfer matrix method

Mathematics Subject Classification ID

Finite difference methods for boundary value problems involving PDEs (65N06) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Statistical mechanics of semiconductors (82D37)

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Cites work

• Global approximate Newton methods

Cited in

(3)

• FETMOSS
• Planar split dual gate MOSFET
• 2D quantum mechanical device modeling and simulation: Centre-channel (CC) and double-gate (DG) MOSFET

Describes a project that uses

Uses Software

• Matlab

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