Impurity diffusion through strained semiconductors
From MaRDI portal
Recommendations
- Diffusion in a strained cubic crystal
- Mathematical modelling of the interstitialcy diffusion mechanism
- Simulation of the diffusion of point defects in structures with local elastic stresses
- An analysis of a kick-out diffusion mechanism with charge effects
- Effect of stresses and strains on impurity redistribution in a plate under uniaxial loading
Cited in
(8)- Theoretical considerations about solid-state diffusion of impurities into crystals
- Influence of mechanical stress in a multilayer structure on spatial distribution of dopants in implanted-junction and diffusion-junction rectifiers
- Effect of stresses and strains on impurity redistribution in a plate under uniaxial loading
- Single dopant diffusion in semiconductor technology
- scientific article; zbMATH DE number 2063281 (Why is no real title available?)
- Simulation of the diffusion of point defects in structures with local elastic stresses
- On the modelling of semi-insulating GaAs including surface tension and bulk stresses
- Diffusion in a strained cubic crystal
This page was built for publication: Impurity diffusion through strained semiconductors
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3372804)