Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - effects of baffle shape (Q2379415)
From MaRDI portal
| This is the item page for this Wikibase entity, intended for internal use and editing purposes. Please use this page instead for the normal view: Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - effects of baffle shape |
scientific article; zbMATH DE number 5685062
| Language | Label | Description | Also known as |
|---|---|---|---|
| default for all languages | No label defined |
||
| English | Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - effects of baffle shape |
scientific article; zbMATH DE number 5685062 |
Statements
Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - effects of baffle shape (English)
0 references
19 March 2010
0 references
ammonothermal growth
0 references
GaN
0 references
temperature
0 references
numerical simulation
0 references
natural convection
0 references
funnel-shaped baffle
0 references
0.6848950982093811
0 references
0.6756743788719177
0 references