A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs (Q3394237)
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scientific article; zbMATH DE number 5599680
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| English | A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs |
scientific article; zbMATH DE number 5599680 |
Statements
A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs (English)
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28 August 2009
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non-classical CMOS
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surface potential
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DG-MOSFETs
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device physics
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compact modelling
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ULSI circuit simulation
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0.830284595489502
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0.747479259967804
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0.7415196299552917
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0.7411117553710938
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0.7275227904319763
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