Extended hydrodynamic model for the coupled electron-phonon system in silicon semiconductors (Q3403891)
From MaRDI portal
!
This is the item page for this Wikibase entity, intended for internal use and editing purposes. Please use the normal view instead:
scientific article; zbMATH DE number 5667095
| Language | Label | Description | Also known as |
|---|---|---|---|
| default for all languages | No label defined |
||
| English | Extended hydrodynamic model for the coupled electron-phonon system in silicon semiconductors |
scientific article; zbMATH DE number 5667095 |
Statements
EXTENDED HYDRODYNAMIC MODEL FOR THE COUPLED ELECTRON-PHONON SYSTEM IN SILICON SEMICONDUCTORS (English)
0 references
5 February 2010
0 references
semiconductor devices
0 references
Boltzmann-Poisson system for semiconductors
0 references
hydrodynamic model
0 references
maximum entropy principle
0 references
0.8813952207565308
0 references
0.8581380248069763
0 references
0.8517037034034729
0 references
0.8511024713516235
0 references
0.8476453423500061
0 references
